- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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ПОСМОТРЕТЬ | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6-P | + 100 C | 250 W | Triple Dual Common Source | 600 V | 1.5 V | 100 A | 600 nA | |||
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ПОСМОТРЕТЬ | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6-P | + 100 C | 350 W | Triple Dual Common Source | 1.2 kV | 1.7 V | 100 A | 400 nA |
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