- Packaging :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Channel Type :
- Driven Configuration :
- Current - Peak Output (Source, Sink) :
- Rise / Fall Time (Typ) :
- Прикладные фильтры :
37 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Package / Case | Series | Packaging | Input Type | Number of Drivers | Mounting Type | Operating Temperature | Part Status | Voltage - Supply | Supplier Device Package | Factory Stock | Minimum Quantity | Channel Type | Driven Configuration | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
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ПОСМОТРЕТЬ | IXYS | IC GATE DRIVER DUAL 4A 6-DFN | 6-VDFN Exposed Pad | - | Tape & Reel (TR) | Inverting | 2 | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 4.5 V ~ 30 V | 6-DFN (4x5) | 0 | 1000 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | - | 9ns, 8ns | |||
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ПОСМОТРЕТЬ | IXYS | IC GATE DRIVER 4A 6-DFN | 6-VDFN Exposed Pad | - | Tape & Reel (TR) | Inverting, Non-Inverting | 2 | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 4.5 V ~ 30 V | 6-DFN (4x5) | 0 | 1000 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | - | 9ns, 8ns | |||
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ПОСМОТРЕТЬ | Infineon Technologies | IC DRIVER BRIDGE 3PHASE 28SOIC | 28-SOIC (0.295", 7.50mm Width) | - | Tape & Reel (TR) | Inverting, Non-Inverting | 6 | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | 11.5 V ~ 20 V | 28-SOIC | 0 | 1000 | 3-Phase | Half-Bridge | IGBT, N-Channel MOSFET | 0.8V, 3V | 200mA, 350mA | 600V | 125ns, 50ns | |||
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ПОСМОТРЕТЬ | Infineon Technologies | IC DRIVER 3PHASE 600V 28-SOIC | 28-SOIC (0.295", 7.50mm Width) | - | Tape & Reel (TR) | Inverting | 6 | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | 10 V ~ 20 V | 28-SOIC | 0 | 1000 | 3-Phase | Half-Bridge | IGBT, N-Channel MOSFET | 0.8V, 3V | 200mA, 350mA | 600V | 125ns, 50ns | |||
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ПОСМОТРЕТЬ | Infineon Technologies | IC DRIVER 3PHASE 600V 28-SOIC | 28-SOIC (0.295", 7.50mm Width) | - | Tape & Reel (TR) | Inverting, Non-Inverting | 6 | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | 11.5 V ~ 20 V | 28-SOIC | 0 | 1000 | 3-Phase | Half-Bridge | IGBT, N-Channel MOSFET | 0.8V, 3V | 200mA, 350mA | 600V | 125ns, 50ns | |||
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ПОСМОТРЕТЬ | Infineon Technologies | IC DVR 3PHASE SOFT TURN 28-SOIC | 28-SOIC (0.295", 7.50mm Width) | - | Tape & Reel (TR) | Inverting | 6 | Surface Mount | -40°C ~ 150°C (TJ) | Active | 12 V ~ 20 V | 28-SOIC | 0 | 1000 | 3-Phase | Half-Bridge | IGBT, N-Channel MOSFET | 0.8V, 3V | 200mA, 350mA | 600V | 125ns, 50ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | 14A 5LEAD TO-263 NON INVERTING | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | - | Tube | Non-Inverting | 1 | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | TO-263-5 | 0 | 1000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | - | 25ns, 18ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | 14A 5PIN TO-220 NON INVERTING | TO-220-5 Formed Leads | - | Tube | Non-Inverting | 1 | Through Hole | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | TO-220-5 | 0 | 1000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | - | 25ns, 18ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | 14A 5 LEAD TO-263 INVERTING | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | - | Tube | Inverting | 1 | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | TO-263-5 | 0 | 1000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | - | 25ns, 18ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | 14A 5 PIN TO-220 INVERTING | TO-220-5 Formed Leads | - | Tube | Inverting | 1 | Through Hole | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | TO-220-5 | 0 | 1000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | - | 25ns, 18ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | 14A 8SOIC EXP MTL NON INVERTING | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Non-Inverting | 1 | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | 1000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | - | 25ns, 18ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | 14A 8LEAD SOIC EXP MTL INVERTING | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Inverting | 1 | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | 1000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | - | 25ns, 18ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | 14A 8SOIC EXP MTL NON INV W/ENAB | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Non-Inverting | 1 | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | 1000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | - | 25ns, 18ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV TO263-5 | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | - | Tube | Non-Inverting | 1 | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | TO-263-5 | 0 | 1000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV TO220-5 | TO-220-5 Formed Leads | - | Tube | Non-Inverting | 1 | Through Hole | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | TO-220-5 | 0 | 1000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV TO220-5 | TO-220-5 | - | Tube | Inverting | 1 | Through Hole | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | TO-220-5 | 0 | 1000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV TO263-5 | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | - | Tube | Non-Inverting | 1 | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | TO-263 | 0 | 1000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Inverting | 1 | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | 1000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | 14A 8 PIN DIP NON INVERTING | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Inverting | 1 | Through Hole | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-DIP | 0 | 1000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | - | 25ns, 18ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | 14A 8 PIN DIP INVERTING | 8-DIP (0.300", 7.62mm) | - | Tube | Inverting | 1 | Through Hole | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-DIP | 0 | 1000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | - | 25ns, 18ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | IC MOSFET/IGBT DVR 600V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Non-Inverting | 1 | Surface Mount | -40°C ~ 150°C (TJ) | Active | 9 V ~ 12 V | 8-SOIC | 0 | 1000 | Single | High-Side | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600V | 23ns, 20ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | IC HIGH SIDE DRIVER 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Non-Inverting | 1 | Surface Mount | -40°C ~ 150°C (TJ) | Active | 9 V ~ 12 V | 8-SOIC | 0 | 1000 | Single | High-Side | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600V | 23ns, 20ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | IC HIGH SIDE DRIVER 8DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Inverting | 1 | Through Hole | -40°C ~ 150°C (TJ) | Active | 9 V ~ 12 V | 8-DIP | 0 | 1000 | Single | High-Side | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600V | 23ns, 20ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | 2A 8 SOIC EXP METAL DUAL INVERT | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Inverting | 2 | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | 1000 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | - | 7.5ns, 6.5ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | 2A 8SOIC EXP MTL DUAL IN/NON-INV | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Inverting, Non-Inverting | 2 | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | 1000 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | - | 7.5ns, 6.5ns | |||
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ПОСМОТРЕТЬ | Microchip Technology | IC MOSFET DVR HIGH-SIDE 4TDFN | 4-UQFN | - | Tape & Reel (TR) | Non-Inverting | 1 | Surface Mount | -40°C ~ 125°C (TJ) | Active | 2.7 V ~ 9 V | 4-TQFN (1.2x1.2) | 0 | 1000 | Single | High-Side | N-Channel MOSFET | 0.8V, 3V | - | - | - | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL HS 8DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Inverting, Non-Inverting | 2 | Through Hole | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-DIP | 0 | 1000 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | - | 9ns, 8ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Non-Inverting | 1 | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC | 0 | 1000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Inverting | 1 | Through Hole | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-DIP | 0 | 1000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | |||
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ПОСМОТРЕТЬ | IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Inverting | 1 | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC | 0 | 1000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns |
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