- Collector- Emitter Voltage VCEO Max :
- Прикладные фильтры :
4 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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ПОЛУЧИТЬ ЦИТАТЫ |
308
В наличии
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Infineon Technologies | IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body | Through Hole | TO-247-3 | + 175 C | Tube | 310 W | Single | 1200 V | 1.8 V | 40 A | 100 nA | 20 V | |||
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ПОЛУЧИТЬ ЦИТАТЫ |
230
В наличии
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS TrenchStop | Through Hole | TO-247-3 | + 175 C | Tube | 310 W | Single | 1350 V | 1.9 V | 40 A | 100 nA | 5.8 V | |||
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ПОЛУЧИТЬ ЦИТАТЫ |
233
В наличии
|
Infineon Technologies | IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body | Through Hole | TO-247-3 | + 175 C | Tube | 310 W | Single | 1200 V | 1.8 V | 40 A | 100 nA | 20 V | |||
|
ПОЛУЧИТЬ ЦИТАТЫ |
193
В наличии
|
Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 310 W | Single | 1350 V | 1.9 V | 40 A | 100 nA | 5.8 V |
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