- Производство :
- Package / Case :
- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Прикладные фильтры :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ПОЛУЧИТЬ ЦИТАТЫ |
25
В наличии
|
IXYS | IGBT Modules 1700V/85A High Voltage XPT IGBT | IGBT Silicon Modules | Module | + 175 C | Tube | 680 W | Single Dual Emitter | 1700 V | 3 V | 88 A | 100 nA | ||
|
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ПОСМОТРЕТЬ | Infineon Technologies | IGBT Modules 1200V 100A FL BRIDGE | IGBT Silicon Modules | EconoPACK 3A | + 150 C | 680 W | Hex | 1200 V | 2.5 V | 150 A | 400 nA |
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