- Производство :
- Package / Case :
- Configuration :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Прикладные фильтры :
4 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ПОЛУЧИТЬ ЦИТАТЫ |
15
В наличии
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Fieldstop Low Freq ... | IGBT Silicon Modules | SOT-227-4 | + 150 C | Bulk | 446 W | 1.2 kV | 1.7 V | 153 A | 600 nA | |||
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ПОЛУЧИТЬ ЦИТАТЫ |
4
В наличии
|
Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Fieldstop Low Freq ... | IGBT Silicon Carbide Modules | ISOTOP-4 | + 150 C | 446 W | Single | 1.2 kV | 1.7 V | 153 A | 600 nA | |||
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ПОСМОТРЕТЬ | Vishay | IGBT Modules Output & SW Modules - IAP IGBT | INT-A-PAK | + 150 C | 446 W | Half Bridge | 1.2 kV | 1.75 V | 100 A | 400 nA | |||||
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ПОСМОТРЕТЬ | Vishay | IGBT Modules Output & SW Modules - IAP IGBT | INT-A-PAK | + 150 C | 446 W | 1.2 kV | 1.7 V | 100 A | 400 nA |
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