- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Прикладные фильтры :
3 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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ПОСМОТРЕТЬ | Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | INT-A-PAK | + 150 C | 1.136 kW | Half Bridge | 1.2 kV | 3.1 V | 200 A | 400 nA | |||
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ПОСМОТРЕТЬ | Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | INT-A-PAK | + 150 C | 1.136 kW | Half Bridge | 600 V | 1.24 V | 530 A | +/- 200 nA | |||
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ПОСМОТРЕТЬ | Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | INT-A-PAK | + 150 C | 1.136 kW | Half Bridge | 1.2 kV | 1.9 V | 360 A | 400 nA |
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