- Производство :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Прикладные фильтры :
3 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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ПОЛУЧИТЬ ЦИТАТЫ |
16
В наличии
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Infineon Technologies | IGBT Modules 1200V 300A DUAL | IGBT Silicon Modules | 62 mm | + 125 C | 2500 W | Dual | 1200 V | 2.1 V | 625 A | 400 nA | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
10
В наличии
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Infineon Technologies | IGBT Modules 1200V 400A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 2500 W | Single Dual Emitter | 1200 V | 2.1 V | 625 A | 400 nA | ||
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ПОСМОТРЕТЬ | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.9 kW | Dual | 1.2 kV | 2.05 V | 625 A | 680 nA |
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