- Производство :
- Package / Case :
- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Прикладные фильтры :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ПОЛУЧИТЬ ЦИТАТЫ |
49
В наличии
|
IXYS | IGBT Modules 900V 70A 2.7V XPT IGBTs GenX3 w/ Diode | IGBT Silicon Modules | SOT-227 | + 150 C | Tube | Single | 900 V | 2.7 V | 115 A | 100 nA | |||
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ПОСМОТРЕТЬ | Infineon Technologies | IGBT Modules 1200V 50A DUAL | IGBT Silicon Modules | 34MM | + 125 C | 460 W | Dual | 1200 V | 2.4 V | 115 A | 400 nA |
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